Ion Etch Rate Films
Tantalum Pentoxide on Tantalum Films – BCR 261
(Ta2O5 on Ta metal, 4 pieces 30 nm thick, 4 pieces 100 nm thick)
From Sigma-Aldrich in USA:
BCR 261 Ta2O5 Standard (8 pieces) for Ion Etch Rate Measurement
https://www.sigmaaldrich.com/catalog/product/sial/bcr261t?lang=en®ion=US
From Joint Research Center in Belgium:
BCR 261 Ta2O5 Standard (8 pieces) for Ion Etch Rate Measurement
https://crm.jrc.ec.europa.eu/p/40455/40468/By-material-matrix/Other-manufactured-materials/BCR-261T-TANTALUM-PENTOXIDE-ON-TANTALUM-FOIL/BCR-261T&accept_cookies=1
Thermal SiO2 on Silicon Films
From Ted Pella in USA:
Thermally Grown SiO2 on Silicon wafer
https://www.tedpella.com/vacuum_html/Substrates_Supports_Wafers_Slides.htm
From University Wafers in USA:
Thermally Grown SiO2 on Silicon wafer
https://order.universitywafer.com/default.aspx?cat=Thermal%20Oxide
Ni/Cr thin film depth profile standard – NIST SRM 2135c
This NIST Standard Reference Material (SRM) is intended primarily for calibrating sputtered depth scales and erosion rates in surface analysis. A unit of SRM 2135c consists of nine alternating metal thin-film layers, five layers of pure chromium and four of pure nickel, on a polished silicon (100) substrate.
From Sigma-Aldrich in USA:
Ni/Cr – 9 alternating layers: four layers of pure Nickel, and five layers of pure Chromium
https://www.sigmaaldrich.com/catalog/product/sial/nist2135c?lang=en®ion=US